Microelectronic capacitor structure compatible with copper containing microelectronic conductor layer processing

US6466427B1 · kind B1 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventor

• Sheng-Hsiung Chen · Hsinchu, TW

Key dates

• Filing date: May 31, 2000
• Grant date: Oct 15, 2002
• Expiry date: May 31, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/047

Abstract

A method for fabricating a capacitor, and a capacitor fabricated employing the method. To practice the method, there is first provided a substrate. In accord with a first embodiment, there is then formed over the substrate a first capacitor electrode plate formed of a first copper containing conductor material. There is then formed upon the first capacitor electrode plate a first barrier layer. There is then formed upon the first barrier layer a capacitor dielectric layer. There is then formed upon the capacitor dielectric layer a second barrier layer. Finally, there is then formed upon the second barrier layer a second capacitor electrode plate formed of a second copper containing conductor material. The method contemplates a capacitor fabricated employing the method. In accord with a second embodiment, a capacitor dielectric material from which is formed the capacitor dielectric layer is not derived from a barrier material from which is formed the first barrier layer. The capacitors provide enhanced thermal interdiffusion stability and enhanced oxidation stability.