DRAM sense amplifier having pre-charged transistor body nodes
US6466499B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 11, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jul 19, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/4091
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A DRAM sense amplifier that reduces the leakage current through the sense amplifier circuitry while the array is active, while controlling the body voltage of the sense amplifier transistors to improve performance of the sense amplifier circuitry is disclosed. The body nodes of the sense amplifier transistors are pre-charged to a voltage potential, such as for example Vcc/2. The body nodes are disconnected from the pre-charge voltage while the sense amplifier is enabled, i.e., during an access operation, but the threshold voltage Vt of the sense amplifier transistors will be lower during sensing due to the pre-charge level. As the body potential drops during sensing, the threshold voltage Vt will increase, thereby reducing the leakage current that flows through the sense amplifier while the digit lines are separated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.