Methods and apparatus for the in-situ measurement of CMP process endpoint
US6466642B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 2, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jun 8, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2223/076
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method and apparatus for the in-process measurement of the thickness and composition of a material layer on a workpiece during chemical mechanical polishing are disclosed. The chemical mechanical polishing apparatus includes a platen having a polishing pad mounted thereto and an x-ray probe assembly mounted into a recessed volume in the platen. The x-ray probe assembly includes an x-ray emitter and an x-ray detector. The thickness and composition of the material layer on the workpiece is measured by generating and directing an incident x-ray beam onto a location on the surface of the wbrkpiece, and then capturing the resultant fluorescent beam and processing data from the resultant fluorescent beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.