Anodically bonded, gas impervious cavity structures fabricated in silicon
US6467354B1 · kind B1 · utility
12Cited by
2References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 23, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Oct 23, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01L19/0627
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Glass with metal deposited on it in a pattern which is slightly larger than the cavity area of the corresponding silicon wafer. The metal layer has a thickness such that the glass can deform sufficiently to allow bonding of the glass to the silicon. The metal is then compressively bonded to the silicon in a rim area around the edge of the cavity. The metal provides a barrier to helium which can leak through the glass, but is stopped by the metal barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.