Patent · US Expired

Method of producing an open form

US6468348B1 · kind B1 · utility

4Cited by

6References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Ulrike Gruning · Hopewell Junction, US
Hermann Wendt · Grasbrunn, DE
Volker Lehmann · Hersbruck, DE
Reinhard Stengl · Stadtbergen, DE
Hans Reisinger · Grünwald, DE

Key dates

Filing date	Mar 30, 2000
Grant date	Oct 22, 2002
Priority date	—
Expiry date	Mar 30, 2020

Classification

Technology area (CPC G)Physics
CPC primaryG02B6/1225
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

An open form is produced with a plurality of in each case two-dimensionally structured layers. The form is made of silicon which is etchable in dependence on its doping. A first silicon layer is first produced, and a portion of the first layer which belongs to the form to be produced, is marked by doping at least one zone of the first layer. Subsequently, at least one further silicon layer is applied, and a portion belonging to the form is also marked therein. Finally, every unmarked portion of the layers is removed by etching depending on the respective doping of each layer. The open form is, in particular, a photonic crystal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.