Method for forming a semiconductor device having a metallic substrate
US6468824B2 · kind B2 · utility
107Cited by
12References
28Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Mar 22, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0365
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a semiconductor device with a metallic substrate. The method comprises providing a semiconductor substrate. At least a semiconductor layer is formed on the semiconductor substrate. A metallic electrode layer is formed on the semiconductor layer. The metallic substrate is formed on the metallic electrode layer and the semiconductor substrate is removed. The metallic substrate has advantages of high thermal and electrical conductivity, that can improve the reliability and life-time of the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.