Method for manufacturing high efficiency photovoltaic devices at enhanced depositions rates

US6468829B2 · kind B2 · utility

Assignee

• United Solar Systems Corporation · US

Inventors

• Subhendu Guha · Troy, US
• Chi C. Yang · Troy, US
• Kenneth Lord · Rochester Hills, US

Key dates

• Filing date: May 8, 2001
• Grant date: Oct 22, 2002
• Expiry date: May 8, 2021

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A P-I-N type photovoltaic device is manufactured by a process wherein the deposition rate of the intrinsic layer is controlled so that a portion of the intrinsic layer which is closest to the P-I interface, and which comprises at least 10% of the thickness of the intrinsic layer, is deposited at a rate which is less than the average rate at which the entire intrinsic layer is deposited.