Reduced surface field device having an extended field plate and method for forming the same
US6468837B1 · kind B1 · utility
14Cited by
10References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Aug 7, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
A semiconductor device (10) comprises a reduced surface field (RESURF) implant (14). A field oxide layer (20), having a length, is formed over the RESURF implant (14). A field plate (12) extends from a near-side of the field oxide layer (20) and over at least one-half of the length of the field oxide layer (20).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.