Integrated circuit capable of operating at two different power supply voltages

US6468860B1 · kind B1 · utility

Assignee

• BAE Systems Information and Electronic Systems Integration Inc. · US

Inventors

• Murty S. Polavarapu · Vienna, US
• Jon Maimon · Manassas, US

Key dates

• Filing date: Nov 15, 2000
• Grant date: Oct 22, 2002
• Expiry date: Nov 17, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/856

Abstract

A method for manufacturing an integrated circuit having high voltage transistors and low voltage transistors is disclosed. First, lightly doped drains are formed in both high voltage transistors and low voltage transistors within the integrated circuit. A thin layer of silicon nitrate film is then deposited on the first and second transistors. Afterwards, a layer of silicon oxide is deposited on the silicon nitride film. After forming oxide spacers on both high voltage transistors and low voltage transistors, the oxide spacers are removed from the low voltage transistors. Finally, diffusion implants are performed on the first and second transistors. As a result, the high voltage transistors possess lightly doped drained junctions.