Magneto-resistive tunnel junction head with biasing elements abutting free layer extended portions
US6469879B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3932
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Magneto-resistive tunnel junction head having a tunnel multilayered film with a tunnel barrier layer, a ferromagnetic free layer, and a ferromagnetic pinned layer formed as a sandwich. A magnetic field is applied to the free layer in a longitudinal direction by biasing elements at opposite ends, and a length of the free layer is greater than a length of the pinned layer such that the free layer has portions extending beyond opposite ends of the pinned layer. A head output suitable for ultra-high density recording can be obtained with less reduction of TMR ratio. Selection of the biasing element is flexible. A hard material and also an antiferromagnetic material can be selected and the biasing elements can be disposed on either an upper or lower side of the free layer at a desired distance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.