Magnetic element with an improved magnetoresistance ratio and fabricating method thereof
US6469926B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 22, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Mar 22, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/3909
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An improved and novel magnetic element and fabrication method. The magnetic element (10;30) including a bottom pinned ferromagnetic layer (12;32) and a top pinned ferromagnetic layer (20;40) fabricated antiparallel to one another. The magnetic element (10;30) further including a bottom tunnel barrier layer (14;34), a free ferromagnetic layer (16;46 and 48) and a top tunnel barrier layer (18;38) formed between the bottom pinned ferromagnetic layer (12;32) and the top pinned ferromagnetic layer (20;40). The structure is defined as including two (2) tunnel barrier layers in which one tunnel barrier layer is normal (18) and one is reversed (14), or a structure in which the two tunnel barrier layers are of the same type (34; 38) with the structure further includes a SAF structure (36) to allow for consistently changing magnetoresistance ratios across both tunnel barriers. The magnetic element (10;30) having an improved magnetoresistance ratio and a decrease in voltage dependence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.