Disposable hard mask for photomask plasma etching
US6472107B1 · kind B1 · utility
42Cited by
12References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 30, 1999 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Sep 30, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for creating a photomask which includes a layer of hard mask material the inclusion of which improves the uniformity of critical dimensions on the photomask by minimizing the affect of macro and micro loading. The method for producing the photomask of the instant invention includes two etching processes. The first etching process etches the layer of hard mask, and the second etching process etches the anti-reflective material and opaque material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.