Method for manufacturing an interconnect structure for stacked semiconductor device
US6472293B2 · kind B2 · utility
Assignees
Inventor
Key dates
| Filing date | Nov 30, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Nov 30, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a multi-layer interconnection structure, the wiring length is to be reduced, and the interconnection is to be straightened, at the same time as measures need to be taken against radiation noise. To this end, there is disclosed a semiconductor device in which plural semiconductor substrates, each carrying semiconductor elements, are bonded together. On each semiconductor substrate is deposited an insulating layer through which is formed a connection wiring passed through the insulating layer so as to be connected to the interconnection layer of the semiconductor element. On a junction surface of at least one of the semiconductor substrates is formed an electrically conductive layer of an electrically conductive material in which an opening is bored in association with the connection wiring. The semiconductor substrates are bonded together by the solid state bonding technique to interconnect the connection wirings formed on each semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.