Wire bonding to copper
US6472304B2 · kind B2 · utility
20Cited by
7References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 24, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | May 24, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/20755
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The specification describes techniques for wire bonding gold wires to copper metallization in semiconductor integrated circuits. A barrier layer is formed on the copper, and an aluminum bonding pad is formed on the barrier layer. Gold wire is then thermocompression bonded to the aluminum pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.