Silicon carbide cap layers for low dielectric constant silicon oxide layers

US6472333B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Li-Qun Xia · Santa Clara, US
• Paul Fisher · Brighton, US
• Margaret Gotuaco · San Francisco, US
• Frederic Gaillard · Grenoble, FR
• Ellie Yieh · San Jose, US

Key dates

• Filing date: Mar 28, 2001
• Grant date: Oct 29, 2002
• Expiry date: Mar 28, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a low dielectric constant silicate material for use in integrated circuit fabrication processes is disclosed. The low dielectric constant silicate material is formed by reacting by reacting a gas mixture comprising an organosilane compound, an oxygen source, and an inert gas. Thereafter, a silicon carbide cap layer is formed on the silicate material by reacting a gas mixture comprising a silicon source and a carbon source. The silicon carbide cap layer protects the underlying organosilicate layer from cracking and peeling when it is hardened during a subsequent annealing step.