Trench MOSFET with double-diffused body profile

US6472678B1 · kind B1 · utility

Assignee

• General Semiconductor, Inc. · US

Inventors

• Fwu-Iuan Hshieh · Saratoga, US
• Koon Chong So · Fremont, US

Key dates

• Filing date: Jun 16, 2000
• Grant date: Oct 29, 2002
• Expiry date: Jun 16, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

A trench MOSFET device and process for making the same are described. The trench MOSFET has a substrate of a first conductivity type, an epitaxial layer of the first conductivity type over the substrate, the epitaxial layer having a lower majority carrier concentration than the substrate, a plurality of trenches within the epitaxial layer, a first insulating layer, such as an oxide layer, lining the trenches, a conductive region, such as a polycrystalline silicon region, within the trenches adjacent to the first insulating layer, and one or more trench body regions and one or more termination body regions provided within an upper portion of the epitaxial layer, the termination body regions extending into the epitaxial layer to a greater depth than the trench body regions. Each trench body region and each termination body region has a first region of a second conductivity type, the second conductivity type being opposite the first conductivity type, and a second region of the second conductivity type adjacent the first region, the second region having a greater majority carrier concentration than the first region, and the second region being disposed above the first region and adjac…