General Semiconductor, Inc.
🏢 View company profile →97Patents
4Active
97Granted
36Portfolio score
Filing activity: Jan 22, 1979 → Jul 10, 2007 · 4 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6621107B2 | Trench DMOS transistor with embedded trench schottky rectifier | Electricity | 110 | Expired |
| US6479352B2 | Method of fabricating high voltage power MOSFET having low on-resistance | Electricity | 101 | Expired |
| US6472678B1 | Trench MOSFET with double-diffused body profile | Electricity | 89 | Expired |
| US6593620B1 | Trench DMOS transistor with embedded trench schottky rectifier | Electricity | 88 | Expired |
| US6472708B1 | Trench MOSFET with structure having low gate charge | Emerging Cross-Sectional Technologies | 88 | Expired |
| US6465304B1 | Method for fabricating a power semiconductor device having a floating island voltage sustaining layer | Emerging Cross-Sectional Technologies | 86 | Expired |
| US6475884B2 | Devices and methods for addressing optical edge effects in connection with etched trenches | Electricity | 78 | Expired |
| US6657254B2 | Trench MOSFET device with improved on-resistance | Electricity | 65 | Expired |
| US6376315B1 | Method of forming a trench DMOS having reduced threshold voltage | Electricity | 59 | Expired |
| US6686244B2 | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step | Electricity | 53 | Expired |
| US6283693A | Method and apparatus for semiconductor chip handling | Emerging Cross-Sectional Technologies | 52 | Expired |
| US6762098B2 | Trench DMOS transistor with embedded trench schottky rectifier | Electricity | 48 | Expired |
| US6489660B1 | Low-voltage punch-through bi-directional transient-voltage suppression devices | Electricity | 39 | Expired |
| US6566201B1 | Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion | Electricity | 36 | Expired |
| US6576516B1 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon | Electricity | 36 | Expired |
| US6548860B1 | DMOS transistor structure having improved performance | Electricity | 36 | Expired |
| US6518127B2 | Trench DMOS transistor having a double gate structure | Electricity | 29 | Expired |
| US6777745B2 | Symmetric trench MOSFET device and method of making same | Electricity | 25 | Expired |
| US6724044B2 | MOSFET device having geometry that permits frequent body contact | Electricity | 24 | Expired |
| US6822288B2 | Trench MOSFET device with polycrystalline silicon source contact structure | Electricity | 23 | Expired |
| US6445037B1 | Trench DMOS transistor having lightly doped source structure | Electricity | 23 | Expired |
| US6627949B2 | High voltage power MOSFET having low on-resistance | Electricity | 22 | Expired |
| US6674124B2 | Trench MOSFET having low gate charge | Electricity | 22 | Expired |
| US6624494B2 | Method for fabricating a power semiconductor device having a floating island voltage sustaining layer | Emerging Cross-Sectional Technologies | 22 | Expired |
| US6689662B2 | Method of forming a high voltage power MOSFET having low on-resistance | Electricity | 21 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.