Non-volatile semiconductor memory device and its manufacturing method
US6472701B2 · kind B2 · utility
7Cited by
5References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/908
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a non-volatile semiconductor memory device and a method for manufacturing the device, each memory cell and its select Tr have the same gate insulating film as a Vcc Tr. Further, the gate electrodes of a Vpp Tr and Vcc Tr are realized by the use of a first polysilicon layer. A material such as salicide or a metal, which differs from second polysilicon (which forms a control gate layer), may be provided on the first polysilicon layer. With the above features, a non-volatile semiconductor memory device can be manufactured by reduced steps and be operated at high speed in a reliable manner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.