Inventor · Yokohama, JP

Toshitake Yaegashi

85Patents
15h-index
27Co-inventors
80Inventor score

Filing activity: Jul 9, 1998 → Apr 19, 2017

Most-cited inventions

PatentTitleAreaCited byStatus
US7057936B2 Nonvolatile semiconductor memory device Physics 119 Expired
US6894931B2 Nonvolatile semiconductor memory device Physics 83 Expired
US6353242B1 Nonvolatile semiconductor memory Electricity 79 Expired
US6859394B2 NAND type non-volatile semiconductor memory device Physics 74 Expired
US6265739A Non-volatile semiconductor memory device and its manufacturing method Emerging Cross-Sectional Technologies 64 Expired
US6859395B2 NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages Physics 55 Expired
US7928497B2 Nonvolatile semiconductor memory and manufacturing method thereof Physics 53 Active
US6930921B2 NAND type flash EEPROM in which sequential programming process is performed by using different intermediate voltages Physics 28 Expired
US7151295B2 Non-volatile semiconductor memory device and process of manufacturing the same Electricity 27 Expired
US6512253B2 Nonvolatile semiconductor memory Electricity 25 Expired
US6835987B2 Non-volatile semiconductor memory device in which selection gate transistors and memory cells have different structures Electricity 23 Expired
US6534867B1 Semiconductor device, semiconductor element and method for producing same Electricity 19 Expired
US6878985B2 Nonvolatile semiconductor memory device having a memory cell that includes a floating gate electrode and control gate electrode Electricity 18 Expired
US7274075B2 Nonvolatile semiconductor memory device having pair of selection transistors with different source and drain impurity concentrations and with different channel dopant concentrations Electricity 16 Active
US6495896B1 Semiconductor integrated circuit device with high and low voltage wells Electricity 15 Expired
US6995414B2 Semiconductor memory device including multi-layer gate structure Electricity 12 Expired
US7184309B2 Non-volatile semiconductor memory device Physics 11 Expired
US6816411B2 Non-volatile semiconductor storage device composed of NAND type EEPROM and deletion verification method in non-volatile semiconductor storage device Physics 11 Expired
US6974979B2 Nonvolatile semiconductor memory Electricity 9 Expired
US7005345B2 Non-volatile semiconductor memory device and its manufacturing method Emerging Cross-Sectional Technologies 9 Expired
US7309891B2 Non-volatile and memory semiconductor integrated circuit Electricity 8 Expired
US7115930B2 Semiconductor memory device including multi-layer gate structure Electricity 7 Expired
US6472701B2 Non-volatile semiconductor memory device and its manufacturing method Emerging Cross-Sectional Technologies 7 Expired
US7442978B2 Semiconductor memory device including multi-layer gate structure Electricity 7 Active
US8637915B2 Nonvolatile semiconductor memory Electricity 6 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.