Semiconductor device

US6472718B2 · kind B2 · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Alfred Lell · Maxhütte-Haidhof, DE

Key dates

• Filing date: Feb 12, 2001
• Grant date: Oct 29, 2002
• Expiry date: Feb 12, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/305
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor device includes an electrically conductive III-V doped semiconductor substrate of a first conduction type, a photodiode array having photodiode structures disposed on the III-V doped semiconductor substrate, a first III-V doped semiconductor layer of a second conduction type disposed between the photodiode structures and the III-V doped semiconductor substrate, etching trenches disposed on the III-V doped semiconductor substrate, each of the trenches having inner sides, the inner sides having an insulation layer and a metallization layer for electrically connecting the photodiode structures in series, the metallization layer disposed on the insulation layer, and partition lines separating each of the photodiode structures from others of the photodiode structures for producing an individual photodiode structure when the array is cut through the first III-V doped semiconductor layer along the partition lines.