Patent · US Expired

Layout of a sense amplifier with accelerated signal evaluation

US6473324B2 · kind B2 · utility

1Cited by
6References
9Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 4, 2001
Grant dateOct 29, 2002
Priority date
Expiry dateMay 4, 2021

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C11/4091
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A layout of a sense amplifier configuration for a semiconductor memory is described. The layout has a plurality of read/write amplifiers, extending as strips in the form of rows one under the other, and having NMOS and PMOS transistors. At least one of the two driver transistors is disposed with its doping regions between the associated NMOS or PMOS transistors of the read/write amplifiers. A gate of the driver transistor is configured as a two-strip gate, in order to accelerate the signal evaluation in the sense amplifiers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.