Magnetic memory device
US6473336B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2000 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Feb 6, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory device comprises a memory cell assembled by first and second tunnel junction portions and a switch, each of the first and second tunnel junction portions being formed of a stack of a pinned layer in which a magnetization direction is fixed and a record layer in which a magnetization direction changes depending on an external magnetic field. A first data line is connected to a first end of the first tunnel junction portion. A second data line is connected to the first end of the second tunnel junction portion. A bit line is connected to the second end of the first tunnel junction portion and the second end of the second tunnel junction portion via the switch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.