Method of wafer smoothing for bonding using chemo-mechanical polishing (CMP)
US6475072B1 · kind B1 · utility
45Cited by
9References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Sep 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76251
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus is described incorporating a semiconductor substrate, a CMP tool, a brush cleaning tool, and a chemical wafer cleaning tool. The CMP is performed with a down force of 1 psi, a backside air pressure of 0.5 psi, a platen speed of 50 rpm, a crarrier speed of 30 rpm and a slurry flow rate of 140 milliliters per minute.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.