Group III-V nitride semiconductor growth method and vapor phase growth apparatus
US6475277B1 · kind B1 · utility
16Cited by
5References
13Claims
0Family size
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Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vapor phase growth apparatus 1 for growing a group III-V nitride semiconductor (GaN) comprises a reaction ampoule 3 having a container 11 disposed therein for containing a group III element and an inlet 7 for introducing nitrogen; excitation means 15 for plasma-exciting nitrogen introduced from the inlet 7; and heating means 13 for heating a seed crystal 10 disposed within the reaction ampoule 3 and the container 11; wherein, upon growing the group III-V nitride semiconductor on the seed crystal 10, nitrogen is introduced from the inlet 7, and no gas is let out from within the reaction ampoule 3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.