Anodic bonding of a stack of conductive and glass layers
US6475326B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 13, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Dec 13, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB32B2315/08
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
We have developed a method of anodic bonding which directs cations to a location within a bonding structure which is away from critical bonding surfaces. This prevents the formation of compounds comprising the cations at the critical bonding surfaces. The anodic bonding electrode contacts are made in a manner which concentrates the cations and compounds thereof in a portion of the bonded structure which can be removed, or cleaned to remove the compounds from the structure. A device formed from the bonded structure contains minimal, if any, of the cation-comprising compounds which weaken bond strength within the structure. In the alternative, the cations and compounds thereof are directed to a portion of the bonding structure which does not affect the function of a device which includes the bonded structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.