Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device
US6475882B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Aug 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02513
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A production method of a GaN-based compound semiconductor having excellent crystallinity and a GaN-based semiconductor device produced therefrom. A discrete SiN buffer body is formed on a substrate, and a GaN buffer layer is formed thereon at low temperatures and a GaN semiconductor layer is then formed at high temperatures. By forming the discrete SiN buffer body, the crystal growth, which is dependent on the substrate, of the low-temperature buffer layer is inhibited and monocrystallization is promoted to generate seed crystals used at the time of growing the GaN buffer layer. Further, by forming SiO2 discretely between the substrate and the SiN buffer body or by forming InGaN or a superlattice layer on the GaN semiconductor layer, distortion of the GaN semiconductor layer is reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.