Field emission device
US6476408B1 · kind B1 · utility
5Cited by
28References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/3042
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A field-emission device includes at least one plane cathode made of conductive material with a low electron affinity located on a face of a substrate carrying a layer of a dielectric material, which layer has at least one cavity in which the cathode is located. A gate made of conductive material is located on the dielectric layer and has an aperture centered with respect to the cavity. The conductive material with a low electron affinity is a material deposited in amorphous form. Such a device may find particular application to electron guns or display devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.