Intersubband light emitting element
US6476411B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Nov 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/824
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An intersubband light emitting element includes a semiconducting substrate, a first layer composed of a first semiconducting material, and a second layer composed of second semiconducting material. The first layer makes a heterojunction with the second layer. The top of a valence band of the first semiconducting material is higher in energy than the bottom of a conduction band of the second semiconducting material. The element further includes a third layer making a heterojunction with the first or second layer. The third layer has a superlattice structure. One of the first and second layer is provided on the semiconducting substrate directly or through at least one semiconducting layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.