MOSgated device with trench structure and remote contact and process for its manufacture
US6476443B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 13, 1999 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Oct 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A power MOSFET has a plurality of spaced rows of parallel coextensive trenches. The trenches are lined with a gate oxide and are filled with a single common layer of conductive polysilicon which extends into each trench and overlies the silicon surface which connects adjacent trenches. The source contact is made at a location remote from the trenches and between the rows of trenches. The trenches are 1.8 microns deep, are 0.6 microns wide and are spaced by about 0.6 microns or greater. The trench is from 0.2 to 0.25 microns deeper than the channel region. The device has a very low figure of merit and is useful especially in low voltage circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.