In-situ method and apparatus for end point detection in chemical mechanical polishing
US6476921B1 · kind B1 · utility
30Cited by
17References
17Claims
0Family size
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Key dates
| Filing date | Jul 31, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Sep 25, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method and apparatus for providing in-situ monitoring of the removal of materials in localized regions on a semiconductor wafer or substrate during chemical mechanical polishing (CMP) is provided. In particular, the method and apparatus of the present invention provides for detecting the differences in reflectance between the different materials within certain localized regions or zones on the surface of the wafer. The differences in reflectance are used to indicate the rate or progression of material removal in each of the certain localized zones.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.