Interposer substrate with low inductance capacitive paths
US6477034B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2001 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Oct 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10734
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A thin film capacitor provides an interposer substrate between an integrated circuit die and an organic substrate. The interposer substrate includes a first conductive layer deposited on a base substrate layer. A portion of the first conductive layer provides a first electrode region serving as a first plate of the capacitor. Portions of a second conductive layer forming a second electrode region serving as a second plate of the capacitor. A dielectric layer is disposed between the first and second conductive layers to provide for capacitive regions between the first electrode region and the second electrode region. The base substrate layer and die may be based on similar semiconductor materials, such as Silicon or Gallium Arsenide, to provide an improved coefficient of thermal expansion match.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.