Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layer
US6479404B1 · kind B1 · utility
7Cited by
7References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 2000 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Oct 20, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for forming a metal oxide or a metal silicate gate dielectric layer on a semiconductor substrate is disclosed. A suitably prepared substrate is placed in a chamber. An organic precursor gas is flowed into the chamber. An inorganic precursor gas is then flowed into the chamber. The organic precursor gas catalyzes a reaction between itself, the inorganic precursor and the substrate to form a dielectric layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.