Memory cell having a deep trench capacitor and a vertical channel
US6479852B1 · kind B1 · utility
7Cited by
7References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 25, 2001 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Oct 25, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/373
Abstract
A semiconductor memory cell has a deep trench capacitor and a vertical transistor formed over the deep trench capacitor. The vertical transistor has a control gate electrode, a source/drain region at opposite sides of the control gate electrode, and a channel region surrounding the sidewall and top of the control gate electrode. This can increase the length of the channel region to reduce leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.