Patent · US Expired

Electrostatic discharge (ESD) latch-up protective circuit for an integrated circuit

US6479871B2 · kind B2 · utility

6Cited by

8References

6Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christian Peters · Mountain View, US
Dirk Uffmann · Hersbruck, DE
Hans-Heinrich Viehmann · Munich, DE

Key dates

Filing date	Apr 12, 2001
Grant date	Nov 12, 2002
Priority date	—
Expiry date	Apr 12, 2021

Classification

Technology area (CPC H)Electricity
CPC primaryH10D89/711

Abstract

The ESD protective circuit proceeds from a modified lateral pnpn “latch-up” protective structure having a highly doped n-type zone, which is arranged on the well boundary, along that section of the periphery of the well which runs between the two oppositely doped regions. The highly doped zone is formed of pads arranged with intermediate spacing along the section of the periphery of the well. The result is a low triggering voltage in conjunction with a low on resistance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.