Non-volatile memory with a charge pump with regulated voltage
US6480436B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2001 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Jul 19, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor memory includes a plurality of memory cells connected to one another to form a matrix of memory cells. A charge pump is connected to the matrix of memory cells. A plurality of controllable connection elements are provided, with each controllable connection element connected between an output terminal of the charge pump and a respective column line. Connected to the output of the charge pump is the series connection of a first element equivalent to a controllable connection element, and a second element equivalent to a memory cell in a predetermined biasing condition. A voltage regulator is connected between the second equivalent element and the input terminal of the charge pump for regulating the output voltage therefrom based upon a voltage present between terminals of the second equivalent element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.