Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistances
US6482704B1 · kind B1 · utility
36Cited by
13References
44Claims
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Key dates
| Filing date | Nov 17, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Nov 17, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a silicon carbide semiconductor device including a gate oxide film formed on a surface channel layer, the gate oxide film is formed by a thermal oxidation treatment that is performed at conditions under which a recrystallization reaction between silicon dioxide (SiO2) and carbon (C) occurs to produce silicon carbide (SiC) with a Gibbs free energy G3 being negative. The recrystallization reaction is expressed by a chemical formula of SiO2+3C→SiC+2CO+G3. Accordingly, residual carbon can be reduced at an interface between the gate oxide film and the surface channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.