Method of generating spin-polarized conduction electron and semiconductor device
US6482729B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2001 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Mar 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/385
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A semiconductor device for generating spin-polarized conduction electrons including a ferromagnetic semiconductor layer and a non-magnetic semiconductor layer having a band alignment of Type II with respect to the ferromagnetic semiconductor, said ferromagnetic semiconductor layer and non-magnetic semiconductor layer being connected together directly or with interposing therebetween another non-magnetic semiconductor layer or energy barrier layer such that a spin splitting of a conduction band of the non-magnetic semiconductor layer is induced by a spontaneous spin splitting of a valence band of the ferromagnetic semiconductor layer, and spin-polarized conduction electrons are generated in the non-magnetic semiconductor layer by the spin splitting of the conduction band of the non-magnetic semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.