Method of forming a carbon doped oxide layer on a substrate
US6482754B1 · kind B1 · utility
18Cited by
6References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 29, 2001 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | May 29, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a carbon doped oxide layer on a substrate is described. That method comprises introducing into a chemical vapor deposition apparatus a precursor gas that is selected from those having the formula (CH3)xSi(OCH3)4−x. Simultaneously, a background gas, oxygen and nitrogen are introduced into the chemical vapor deposition apparatus. That apparatus is then operated under conditions that cause a carbon doped oxide layer to form on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.