Semiconductor device and production method thereof
US6483167B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 23, 2000 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Aug 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
In a semiconductor device and production method thereof, a technique is used to prevent film separation of the bottom electrode occurring during a heat treatment process which is carried out to make the bottom electrode closely packed and in the heat treatment process for producing dielectric crystallization. In the production method, a glue layer including an insulator is formed between SiO2 insulation layer and the inner wall of a concave hole. The SiO2 layer 14 is located on the Si board 11, and Si plug 12 and a barrier layer 13 are formed therein. A glue layer 16 is formed on the inner wall of the hole of the SiO2 insulation layer 15, and a bottom electrode 17 comprising Ru is formed on the barrier layer 13 and glue layer 16. Dielectric film 18 comprising BST and a top electrode 19 comprising Ru are laminated sequentially on the bottom electrode 17, to form a dielectric device with the bottom electrode 17.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.