All metal giant magnetoresistive memory
US6483740B2 · kind B2 · utility
36Cited by
22References
82Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2001 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Jun 18, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/1657
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device is described which includes memory cells, access lines, and support electronics for facilitating access to information stored in the memory cells via the access lines. Both the memory cells and the support electronics comprise multi-layer thin film structures exhibiting giant magnetoresistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.