Substrate processing apparatus and semiconductor device producing method
US6483989B1 · kind B1 · utility
530Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2001 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Nov 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate processing apparatus is disclosed for heating a substrate by a heater through a susceptor in a state in which the substrate is placed on the susceptor, to process the substrate. The heater is divided into a plurality of respectively controlled zone heaters to form gaps therebetween, a center position of a gap of the gaps which is positioned closer to an end of the substrate than any other gap is located in a range from an inner side 10 mm to an outer side 6 mm in a radial direction of the substrate with respect to the end of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.