High-speed random access semiconductor memory device
US6484246B2 · kind B2 · utility
45Cited by
13References
42Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 1999 |
| Grant date | Nov 19, 2002 |
| Priority date | — |
| Expiry date | Aug 26, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/229
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A dynamic random access memory device includes a bit line, a memory cell coupled to the bit line, and a word line coupled to the memory cell. A read activation time between receiving a read command for a read operation in order to read data: from the memory cell and activating the word-line-may be different from a write activation time between receiving a write command for a write operation in order to write data to the memory cell and activating the word line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.