Inventor · Yokohama, JP

Haruki Toda

236Patents
28h-index
48Co-inventors
90Inventor score

Filing activity: May 16, 1984 → Apr 6, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US6125071A Semiconductor memory device with high data read rate Physics 426 Expired
US6449727B1 High-speed data transfer synchronizing system and method Physics 143 Expired
US7606059B2 Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell array Electricity 140 Expired
US5323358A Clock-synchronous semiconductor memory device and method for accessing the device Physics 103 Expired
US7729158B2 Resistance change memory device Electricity 89 Active
US7394680B2 Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase mode Physics 88 Active
US5010518A Semiconductor memory device Physics 74 Expired
US7400522B2 Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation Physics 70 Active
US6321343A Semiconductor memory system comprising synchronous DRAM and controller thereof Physics 64 Expired
US7459716B2 Resistance change memory device Emerging Cross-Sectional Technologies 60 Active
US5867432A Clock control circuit Physics 60 Expired
US7335906B2 Phase change memory device Electricity 57 Expired
US7459715B2 Resistance change memory device Emerging Cross-Sectional Technologies 55 Active
US5926436A Semiconductor memory device Physics 54 Expired
US4603403A Data output circuit for dynamic memory device Physics 54 Expired
US7623370B2 Resistance change memory device Electricity 48 Active
US6847555B2 Non-volatile semiconductor memory device reading and writing multi-value data from and into pair-cells Physics 45 Expired
US6484246B2 High-speed random access semiconductor memory device Physics 45 Expired
US5249165A Memory cell array divided type multi-port semiconductor memory device Physics 41 Expired
US5029128A Semiconductor memory device with ferroelectric capacitor cells with a plate to which a mid-level voltage is applied Physics 39 Expired
US7989789B2 Phase-change memory device that stores information in a non-volatile manner by changing states of a memory material Electricity 36 Active
US6085283A Data selecting memory device and selected data transfer device Physics 36 Expired
US5973991A Semiconductor memory capable of successively accessing cell array blocks with a plurality of operation modes having different cycle times Physics 33 Expired
US5313437A Semiconductor memory device Physics 33 Expired
US5051954A Semiconductor memory device Physics 29 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.