Hydrogen-free contact etch for ferroelectric capacitor formation
US6485988B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2000 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Dec 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the instant invention is a method of forming a conductive contact to a top electrode (308 and 310 of FIG. 4d) of a ferroelectric capacitor comprised of a bottom electrode (304 of FIG. 4d) situated under the top electrode and a ferroelectric material (306 of FIG. 4d) situated between the top electrode and the bottom electrode, the method comprising the steps of: forming a layer (408 or 312 of FIG. 4) over the top electrode; forming an opening (414 of FIG. 4d) in the layer to expose a portion of the top electrode by etching the opening into the layer using a hydrogen-free etchant; and depositing conductive material (432 of FIG. 4d) in the opening to form an electrical connection with the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.