Shawming Ma
47Patents
13h-index
66Co-inventors
84Inventor score
Filing activity: Jan 9, 1998 → Nov 7, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6485988B2 | Hydrogen-free contact etch for ferroelectric capacitor formation | Electricity | 102 | Expired |
| US6548343B1 | Method of fabricating a ferroelectric memory cell | Electricity | 101 | Expired |
| US6018187A | Elevated pin diode active pixel sensor including a unique interconnection structure | Emerging Cross-Sectional Technologies | 51 | Expired |
| US6281535A | Three-dimensional ferroelectric capacitor structure for nonvolatile random access memory cell | Electricity | 44 | Expired |
| US5936261A | Elevated image sensor array which includes isolation between the image sensors and a unique interconnection | Electricity | 40 | Expired |
| US6554954B2 | Conductive collar surrounding semiconductor workpiece in plasma chamber | Electricity | 36 | Expired |
| US6215164A | Elevated image sensor array which includes isolation between uniquely shaped image sensors | Electricity | 22 | Expired |
| US6614051B1 | Device for monitoring substrate charging and method of fabricating same | Electricity | 17 | Expired |
| US6613666B2 | Method of reducing plasma charging damage during dielectric etch process for dual damascene interconnect structures | Electricity | 16 | Expired |
| US6576922B1 | Ferroelectric capacitor plasma charging monitor | Electricity | 16 | Expired |
| US6114739A | Elevated pin diode active pixel sensor which includes a patterned doped semiconductor electrode | Electricity | 16 | Expired |
| US6396118B1 | Conductive mesh bias connection for an array of elevated active pixel sensors | Electricity | 14 | Expired |
| US6812145B2 | Method of reducing plasma charging damage during dielectric etch process for dual damascene interconnect structures | Electricity | 13 | Expired |
| US8133819B2 | Plasma etching carbonaceous layers with sulfur-based etchants | Electricity | 11 | Active |
| US11062912B2 | Atomic layer etch process using plasma in conjunction with a rapid thermal activation process | Electricity | 7 | Active |
| US6673636B2 | Method of real-time plasma charging voltage measurement on powered electrode with electrostatic chuck in plasma process chambers | Electricity | 5 | Expired |
| US6270192A | Monolithic ink jet nozzle formed from an oxide and nitride composition | Performing Operations; Transporting | 5 | Expired |
| US7432210B2 | Process to open carbon based hardmask | Electricity | 5 | Active |
| US8048806B2 | Methods to avoid unstable plasma states during a process transition | Electricity | 4 | Active |
| US7838432B2 | Etch process with controlled critical dimension shrink | Electricity | 3 | Active |
| US7510976B2 | Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity | Electricity | 2 | Expired |
| US11049692B2 | Methods for tuning plasma potential using variable mode plasma chamber | Performing Operations; Transporting | 2 | Active |
| US10580661B2 | Atomic layer etch process using plasma in conjunction with a rapid thermal activation process | Electricity | 2 | Active |
| US10790119B2 | Plasma processing apparatus with post plasma gas injection | Electricity | 2 | Active |
| US11289323B2 | Processing of semiconductors using vaporized solvents | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.