Method of reading two-bit memories of NROM cell
US6487114B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Feb 28, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0475
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of reading two-bit information in Nitride Read only memory (NROM) cell simultaneously. According to outputted voltage in drain or source of the NROM, it can identify a logical two-bit combination massage of the NROM. The method includes: grounding the source of the NROM; inputting a voltage to the drain of the NROM; inputting a voltage to the gate of the NROM; measuring the outputted current of drain or source; and dividing the outputted current into four different zones, and each zone represents a specific logical two-bit information, which is “0 and 0”, “0 and 1”, “1 and 0”, or “1 and 1”.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.