Precision programming of nonvolatile memory cells
US6487116B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2001 |
| Grant date | Nov 26, 2002 |
| Priority date | — |
| Expiry date | Jul 20, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C27/005
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit memory system and method for precision hot carrier injection programming of single or plurality of nonvolatile memory cells is described. Each program cycle is followed by a verify cycle. Precision programming is achieved by incrementally changing a programming current pulse flowing between the source and drain in the memory cell during successive program cycles and a constant current during successive verify cycles. Current control and voltage mode sensing circuitry reduces circuit complexity, reduces programming cell current, lowers power dissipation, and enables page mode operation. Precision programming is useful for multilevel digital and analog information storage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.