Silicon Storage Technology, Inc.
🏢 View company profile →618Patents
410Active
618Granted
58Portfolio score
Filing activity: Jan 22, 1990 → Apr 24, 2024 · 100 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5029130A | Single transistor non-valatile electrically alterable semiconductor memory device | Electricity | 439 | Expired |
| US6756633B2 | Semiconductor memory array of floating gate memory cells with horizontally oriented floating gate edges | Electricity | 296 | Expired |
| US6815704B1 | Phase change memory device employing thermally insulating voids | Electricity | 286 | Expired |
| US6882572B2 | Method of operating a semiconductor memory array of floating gate memory cells with horizontally oriented edges | Electricity | 266 | Expired |
| US6937507B2 | Memory device and method of operating same | Physics | 247 | Expired |
| US6927410B2 | Memory device with discrete layers of phase change memory material | Electricity | 240 | Expired |
| US6867638B2 | High voltage generation and regulation system for digital multilevel nonvolatile memory | Physics | 211 | Expired |
| US6339815B1 | Microcontroller system having allocation circuitry to selectively allocate and/or hide portions of a program memory address space | Physics | 177 | Expired |
| US7868375B2 | Split gate non-volatile flash memory cell having a floating gate, control gate, select gate and an erase gate with an overhang over the floating gate, array and method of manufacturing | Electricity | 138 | Active |
| US6282145A | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system | Physics | 137 | Expired |
| US5045488A | Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device | Electricity | 133 | Expired |
| US6396742B1 | Testing of multilevel semiconductor memory | Physics | 112 | Expired |
| US7031214B2 | Digital multilevel memory system having multistage autozero sensing | Physics | 109 | Expired |
| US6505279B1 | Microcontroller system having security circuitry to selectively lock portions of a program memory address space | Physics | 109 | Expired |
| US6405323B1 | Defect management for interface to electrically-erasable programmable read-only memory | Physics | 106 | Expired |
| US5242848A | Self-aligned method of making a split gate single transistor non-volatile electrically alterable semiconductor memory device | Emerging Cross-Sectional Technologies | 102 | Expired |
| US5067108A | Single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate | Electricity | 99 | Expired |
| US5572054A | Method of operating a single transistor non-volatile electrically alterable semiconductor memory device | Electricity | 88 | Expired |
| US7238959B2 | Phase change memory device employing thermally insulating voids and sloped trench, and a method of making same | Emerging Cross-Sectional Technologies | 85 | Expired |
| US7471581B2 | Wide dynamic range and high speed voltage mode sensing for a multilevel digital non-volatile memory | Physics | 78 | Active |
| US7315056B2 | Semiconductor memory array of floating gate memory cells with program/erase and select gates | Physics | 77 | Expired |
| US7533063B2 | Smart memory card wallet | Physics | 75 | Expired |
| US6519180B2 | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system | Physics | 74 | Expired |
| US7050316B1 | Differential non-volatile content addressable memory cell and array using phase changing resistor storage elements | Physics | 66 | Expired |
| US5278087A | Method of making a single transistor non-volatile electrically alterable semiconductor memory device with a re-crystallized floating gate | Emerging Cross-Sectional Technologies | 61 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.