Low dielectric constant films used as copper diffusion barrier
US6489030B1 · kind B1 · utility
22Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2000 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Apr 14, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microelectronic device having a cured polycarbosilane diffusion barrier is disclosed. A microelectronic device has a substrate, a dielectric layer on the substrate and metal filled vias formed through the dielectric layer. A covering of a cured polycarbosilane diffusion barrier is on the metal filled vias and the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.