Angled implant process
US6489223B1 · kind B1 · utility
22Cited by
29References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 3, 2001 |
| Grant date | Dec 3, 2002 |
| Priority date | — |
| Expiry date | Jul 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Different symmetrical and asymmetrical devices are formed on the same chip using non-critical block masks and angled implants. A barrier is selectively formed adjacent one side of a structure and this barrier blocks dopant implanted at an angle toward the structure. Other structures have no barrier or have two barriers. Source and drain engineering can be performed for LDD, halo, and other desired implants.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.